发明名称 Optoelectronic semiconducting component for generating and amplifying coherent radiation for laser material processing and other applications of high energy laser radiation
摘要 The component consists of planar waveguide stacks (1,3,6) of active and passive layers with partially diffractive boundary surface structures (2,5). The diffractive structures in at least one boundary surface are formed by symmetrical superimpositions of crossing grid structures with variable grid parameters grid constant, grid depth and ridge curvature.
申请公布号 DE19809167(A1) 申请公布日期 1999.09.09
申请号 DE19981009167 申请日期 1998.02.26
申请人 FORSCHUNGSVERBUND BERLIN E.V. 发明人 GUETHER, REINER;ERBERT, GOETZ;SEBASTIAN, JUERGEN;WENZEL, HANS
分类号 H01S5/10;H01S5/12;H01S5/40;(IPC1-7):H01S3/098;H01S3/085;H01S3/18 主分类号 H01S5/10
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