Semiconductor memory device having dual word line structure,申请号EP19930116089-传众专利搜索

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发明名称	Semiconductor memory device having dual word line structure
摘要
申请公布号	EP0600184(B1)	申请公布日期	1999.09.08
申请号	EP19930116089	申请日期	1993.10.05
申请人	NEC CORPORATION	发明人	FUJITA, MAMORU
分类号	G11C8/14;G11C11/407;G11C11/401;G11C11/408;G11C11/413;H01L21/8242;H01L27/108;(IPC1-7):G11C8/00	主分类号	G11C8/14
代理机构		代理人
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