High-efficiency solar energy device

摘要

A high-efficiency solar cell including an Indium, Gallium, Aluminum and Nitrogen (in a combination comprising InGaN, or InAlN, or InGaAlN) alloy which may be blended with a polyhedral oligomeric silsesquioxane (POSS) material, and which may include an absorption-enhancing layer including one of more of carbon nanotubes, quantum dots, and undulating or uneven surface topography.

主权项

1. A semiconductor structure useful in forming a solar cell comprising:
a substrate; at least one active layer formed of a material including a homogenous compound of an Indium Gallium Nitride (InGaN) powder and a polyhedral oligomeric silsesquioxane (POSS) material atomized into the InGaN powder to thereby align alloy grain boundaries of the at least one active layer after vaporizing the POSS material; and an absorption-enhancing layer for increasing photon propagation into the at least one active layer.