发明名称 |
Si/SiGe optoelectronic integrated circuits |
摘要 |
<p>An integrated optoelectronic circuit and process for making is described incorporating a photodetector and a MODFET on a chip. The chip contains a single-crystal semiconductor substrate, a buffer layer of SiGe graded in composition, a relaxed SiGe layer, a quantum well layer, an undoped SiGe spacer layer and a doped SiGe supply layer. The photodetector may be a metal-semiconductor-metal (MSM) or a p-i-n device. The detector may be integrated with an n- or p-type MODFET, or both in a CMOS configuration, and the MODFET can incorporate a Schottky or insulating gate. The invention overcomes the problem of producing Si-manufacturing-compatible monolithic high-speed optoelectronic circuits for 850 nm operation by using epixially-grown Si/SiGe heterostructure layers. <IMAGE></p> |
申请公布号 |
EP0940854(A2) |
申请公布日期 |
1999.09.08 |
申请号 |
EP19990301205 |
申请日期 |
1999.02.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHU, JACK OON;ISMAIL, KHALID EZZELDIN;KOESTER, STEVEN JOHN;KLEPSER, BERND-ULRICH H. |
分类号 |
H01L31/10;H01L27/144;H01L31/0312;H01L31/0352;(IPC1-7):H01L27/144;H01L31/035;H01L31/031 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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