| 发明名称 |
SOI substrate bonding under clean room conditions |
| 摘要 |
<p>A method of manufacturing a high-quality bonded SOI substrate is provided. The step of exposing the bonding interface between two substrates is performed in an atmosphere having cleanliness of Class 1 or more in Fed. St. 209D: USA IS standard. A clean room of Class 1 can be obtained using an air filter having a collection efficiency of 99.9999% (6N) or more for dust particles of a size of 0.1 mu m or more. <IMAGE></p> |
| 申请公布号 |
EP0940847(A2) |
申请公布日期 |
1999.09.08 |
| 申请号 |
EP19990301565 |
申请日期 |
1999.03.02 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ATOJI, TADASHI |
| 分类号 |
H01L21/306;B01D46/48;F24F3/16;H01L21/00;H01L21/02;H01L21/762;H01L27/12;(IPC1-7):H01L21/58;H01L21/20 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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