SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device having a structure for blocking a physical diffusion path by forming an oxide layer between barrier layers to prevent impurity diffusion through the physical diffusion path of the barrier layer, and a manufacturing method thereof. The semiconductor device comprises: a gate insulating layer formed on a substrate; a first barrier layer formed on the gate insulating layer; the oxide layer formed on the first barrier layer; a second barrier layer formed on the oxide layer; a gate electrode formed on the second barrier layer; and a source and a drain arranged on both sides of the gate electrode inside the substrate. The oxide layer includes oxide formed by oxidizing a material included in the first barrier layer.