Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers

摘要

The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO2 doping. Specifically, applicants have discovered sputtering Ta2O5 in an oxygen-rich ambient at a temperature in excess of 450 DEG C. and preferably in excess of 550 DEG C., produces a new crystalline phase thin film having enhanced dielectric properties.