| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor wafer and a semiconductor device which will not peeled off in the back-end process, even at the chip with the incomplete outer shape at the periphery part of the wafer. SOLUTION: In this semiconductor wafer 1, a mask pattern design rule, which is looser than that in a complete exposing field 2 at the central part but the opening rate is approximately equal to the center part, is applied in an incomplete exposure field 3 at the peripheral part. This loose design rule has a high allowance for focal-point deviated exposure light and imparts high intensity with respect to peeling. Furthermore, since the opening rates are approximately equal, the dispersion of processing accuracy based on a micro- loading effect is avoided. |
