Method of fabricating an EPROM type device with reduced process residues

摘要

A semiconductor device is fabricated by the step of forming a first device isolation film in a peripheral circuit region by the use of a first pattern and a second device isolation film in a memory cell region by the use of a second pattern; forming a first conducting film processed by the use of a third pattern having a pattern-to-be-removed in a peripheral edge of the memory cell region; the step of forming an insulation film covering the memory cell region and processed by the use of a fourth pattern whose peripheral edge is positioned on the pattern-to-be-removed of the third pattern; and the step of forming a second conducting film processed by a fifth pattern.