Semiconductor integrated circuit device employing interlayer insulating film with low dielectric constant

摘要

A plurality of lines are formed on the principal face of a substrate. An insulating film is formed on the principal surface of this substrate so as to cover the lines. This insulating film consists of a material which contains a low-dielectric constant composition having caged molecular structural units. Spaces of thin electron clouds delineate the centers of the caged molecular structural units. The dielectric constant is accordingly lower than that of denser materials.