| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor wafer supporter, capable of forming films in uniform thickness on a wafer surface and the semiconductor wafer processing method using the supporters. SOLUTION: A plurality of rods 13-16 are arranged between the first and second plates 11 and 12. Next, a plurality of supporting members 17 made of heat-resistant strings 19, e.g. SiC are spread on the rods 13-16, while wafers 18 are held on the support members 17. At this time, the wafer 18 still being held by the supporting members 17 are separated from respective rods 13-16. Accordingly, the films in uniform thickness can be formed on the wafers.</p> |
