SILICON WAFER AND CRYSTAL GROWTH

摘要

PROBLEM TO BE SOLVED: To increase wafer strength without making wafer thickness thick and having adverse effect on electric characteristics of the device and yield. SOLUTION: In this method for growing silicon single crystal 9 by using a CZ method, heat-insulating performance of the lower end part of an inverted conical heat-shielding member 16 arranged on the outside of the crystal pulling up passage is more strengthened than heat-insulating performance of the other part to locally quench the vicinity of solid-liquid interface of growing crystal and the single crystal 9 is pulled up under low speed conditions in which an OSF ring is produced on inner side than 1/2 position of crystal diameter direction or disappears in the center part of crystal. In the wafer, average particle size of transfer cluster produced on the outside of the OSF ring is finely cut into <=100μm to increase mechanical strengths of the wafer.