| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of lattice failures due to heat decomposition of an active layer, during the manufacturing process of a semiconductor element. SOLUTION: On an SiC substrate 1, a first clad layer 2 made of p-type SiC, an active layer 3 of In(1- X) GaXN (0<=X<1), and a second clad layer 4 made of n-type Al(1- Y) GaYN (0<=Y<1) are laminated in the order. Here, the active layer 3 comprises a multilayer film, where a plurality of first InGaN layer 3a of small In composition and one or more second InGaN layer 3b in which in composition is larger than the first InGaN layer 3a are alternately laminated. With such a structure, an n-type clad layer 4 which allows low-temperature growth is grown at the upper part of the active layer 3, so that the occurrence of lattice failures caused by the thermal decomposition of the active layer 3 during the growth of the clad layer 4 is prevented. Furthermore, with the active layer of multilayer film functioning as a buffer layer, crystal dislocations or the occurrence of crackings caused by lattice constant differences between the clad layer 2 and the active layer 3, and between the active layer 3 and the clad layer 4 is eliminated to improve the crystal quality. |
