发明名称 In-situ pre-ILD deposition treatment to improve ILD to metal adhesion
摘要 A method for improving interlayer dielectric to metal layer adhesion including an in-situ plasma treatment process. A metal layer which is formed on a substrate is treated with plasma prior to the deposition of the interlayer dielectric. The interlayer dielectric is deposited above the metal layer and contacts are formed through the interlayer dielectric which electrically connect the underlying metal layer to a subsequently formed metal layer. The plasma treatment step creates open molecular bonds on the surface of the metal layer which cause the interface between the metal layer and the interlayer dielectric to become more adhesive. Thus, decreasing the likelihood of delamination that degrades the electrical reliability of the device.
申请公布号 US5950107(A) 申请公布日期 1999.09.07
申请号 US19960768916 申请日期 1996.12.17
申请人 INTEL CORPORATION 发明人 HUFF, BRETT E.;MOGHADOM, FARHAD K.
分类号 H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/768
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