| 摘要 |
PCT No. PCT/JP95/02677 Sec. 371 Date Sep. 22, 1997 Sec. 102(e) Date Sep. 22, 1997 PCT Filed Dec. 25, 1995 PCT Pub. No. WO96/20522 PCT Pub. Date Jul. 4, 1996As shown in FIG. 1, on a semiconductor substrate 20 formed in sequence are a second n-type clad layer 11, a first n-type clad layer 12, an n-type carrier blocking layer 13, an active layer 14, a p-type carrier blocking layer 15, a first p-type clad layer 16, a second p-type clad layer 17, a current constriction layer 18, and a p-type contact layer 19. The carrier blocking layers 13 and 15 are doped to a high doping concentration of more than 1x1018 cm-3. The first clad layers 12 and 16 and the second clad layers 11 and 17 are doped to a low doping concentration of less than 3x1017 cm-3. The p-type carrier blocking layer 15 is doped with carbon or magnesium which is low in the diffusivity. Accordingly, the carriers are successfully confined in the active layer 14 thus to suppress the internal loss and the electrical resistance, whereby a high-efficiency, high-output semiconductor laser device can be obtained.
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