| 摘要 |
PROBLEM TO BE SOLVED: To lessen reduction in the luminous efficiency of a white light-emitting diode and a color shift of the color of emitted light at the high luminance of the above diode and even under the environment of the long-time use of the above diode, by a method wherein the white light-emitting diode is arranged to one picture element in addition to a light-emitting diode, which can emit red light, green light and blue light. SOLUTION: A white light-emitting diode is formed by combining a luminous layer with a gallium nitride compound semiconductor element having a high-energy band gap and a yttrium aluminium garnet fluorescent substance activated by cerium, which is a photoluminescence fluorescent substance. As a result, even in the case where high-energy light in the range of visible light emitted from a light-emitting element is radiated on the vicinity of the range at the high luminance of the diode for a long time, the white light-emitting diode can be formed into a light-emitting diode, which is very little in a color shift of the color of emitted light and reduction in a luminous luminance. Specially, blue light emission of an InGaN diode, which is used as a nitride compound semiconductor diode and the absorption spectrum of the yttrium aluminium garnet fluorescent substance activated by the cerium coincide well with each other. |
