发明名称 Catalytic acceleration and electrical bias control of CMP processing
摘要 A slurry for chemical-mechanical polishing comprises a high pH solution with particles of a catalyst mixed with the high pH solution for accelerating the polishing rate. The catalyst preferably is a metal selected from the group consisting of platinum, silver, palladium, copper, rhodium, nickel, and iron. The catalyst may be impregnated into a polishing pad used to apply the slurry to a surface. A CMP process for metal surfaces includes applying a slurry to a metal surface to be polished, and providing an electrical bias to the workpiece and to the slurry for controlling the polishing rate. The electrical bias is provided to dies in the workpiece by means of an electrical connection between a bias voltage source and scribe lines between adjacent dies.
申请公布号 US5948697(A) 申请公布日期 1999.09.07
申请号 US19960652905 申请日期 1996.05.23
申请人 LSI LOGIC CORPORATION 发明人 HATA, WILLIAM Y.
分类号 B24B37/04;C09G1/02;H01L21/3105;H01L21/321;(IPC1-7):H01L21/302 主分类号 B24B37/04
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