发明名称 MANUFACTURE OF THIN-FILM SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To simplify a process, and to improve the yield with stable quality, even if the thickness of a semiconductor element formed is 100μm or less. SOLUTION: A supporting substrate 3 is bonded with the circuit forming surface 1a of a semiconductor substrate 1 via adhesives 2 which are capable of lowering adhesion after bonding. Thinning treatment is executed on the semiconductor substrate 1 from a surface on the reverse side to the circuit forming surface 1a, and a tape 4 for dicing is stuck on the circuit forming surface 1a side of the semiconductor substrate 1. The surface side on the reverse side to the circuit forming surface 1a of the semiconductor substrate 1 in cut for each semiconductor elements 5, the adhesive force of adhesives 2 is lowered, and a supporting substrate 3 is peeled from the semiconductor element 5.</p>
申请公布号 JPH11243081(A) 申请公布日期 1999.09.07
申请号 JP19980045270 申请日期 1998.02.26
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 UNNO HIDEYUKI;HENMI MANABU;OFUJI SHINICHI;OGAWA SHIGEO;MAEDA MASAHIKO;TAKEDA TADAO
分类号 H01L21/302;H01L21/301;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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