FORMING METHOD OF CAPACITOR PROVIDED WITH HIGH-DIELECTRIC SUBSTANCE

摘要

PROBLEM TO BE SOLVED: To prevent a storage node electrode from being oxidized in a high- dielectric substance applying process or in a subsequent annealing process, by a method wherein an antioxidant spacer is formed on the lateral edge of a reaction stopping layer and under a platinum layer by dry-etching an antioxidant layer. SOLUTION: A contact plug 38 is formed on a semiconductor substrate 20 with a node, a reaction stopping layer 42 and a platinum layer 44 are formed on the contact plug 38, and the reaction stopping layer 42 is subjected to wet- etching to be provided with recessed parts 48 each on its opposed sides under the platinum layer 44. A sidewall spacer 52 is formed on the recessed parts 48 under the platinum layer 44. When this setup, the side of the reaction stopping layer 42 can be protected against oxidation in a high-dielectric substance applying process or in a following annealing process by the sidewall spacer 52 having resistance with respect to oxidation. Therefore, a storage cell capacitor suitable for a semiconductor device of high degree of integration can be formed.