发明名称 |
Undercoating composition for photolithographic patterning |
摘要 |
An undercoating composition layer to intervene between the surface of a substrate, e.g., a silicon wafer, and a photoresist layer to prevent noxious reflection of exposure light on the substrate surface in the photolithographic patterning work for the manufacture of semiconductor devices comprising: (A) a nitrogen-containing organic compound, as a crosslinking agent, having, in a molecule, at least two amino groups each substituted by at least one substituent selected from the group consisting of hydroxyalkyl groups and alkoxyalkyl groups; and (B) a homopolymer of or a copolymer of a mixture of monomers of which one is a (meth)acrylic acid ester of an aromatic hydroxyl compound selected from the group consisting of bisphenylsulfone compounds having at least one hydroxyl group in a molecule and benzophenone compounds having at least one hydroxyl group in a molecule in a specified proportion.
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申请公布号 |
US5948847(A) |
申请公布日期 |
1999.09.07 |
申请号 |
US19970985359 |
申请日期 |
1997.12.04 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
IGUCHI, ETSUKO;SATO, MITSURU |
分类号 |
G03F7/09;(IPC1-7):C08K5/13;F21V7/22 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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