Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell

摘要

The invention provides an oxide sintered compact 2 composed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase, the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying formulas (1) and (2) in terms of atomic ratio, as well as a sputtering target. There are further provided an oxide transparent conductive film formed using the sputtering target, and a solar cell.
Sn/(In+Sn+Sr)=0.01-0.11  (1)Sr/(In+Sn+Sr)=0.0005-0.004  (2)
[In formulas (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively.]

主权项

1. An oxide sintered compact composed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase,
the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying the following formulas (1) and (2) in terms of atomic ratio:
Sn/(In+Sn+Sr)=0.01-0.11  (1)Sr/(In+Sn+Sr)=0.0005-0.004  (2), wherein in formulae (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively and wherein the oxide sintered compact has a relative density of 97% or greater.