| 摘要 |
A switching device has at least one first layer of a semiconductor material with an energy gap between the valence band and the conduction band exceeding 2 eV and adapted to make the device conducting a current upon irradiation thereof by radiation from an irradiation source (14) creating free charge carriers therein for at least one direction of a voltage applied across terminals (1, 2) of the device. The first layer is doped by dopants assuming such deep energy levels in said semiconductor material that the majority thereof will not be thermally activated at room temperature, and the irradiation source is adapted to emit radiation of an energy being high enough for activating said dopants. |
