METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the coatability of an insulating film.SOLUTION: A method for manufacturing a semiconductor device includes the steps of: forming a first electrode 17 on a semiconductor layer 10; forming a first insulating film 21 including an opening through which a part of the first electrode is exposed on the first electrode; forming a second electrode 26 on the opening and the first insulating film; forming a mask layer covering a side surface of the second electrode and including an opening through which a surface of the second electrode is exposed; forming a third electrode 29 on the second electrode exposed from the mask layer; exposing the side surface of the second electrode by removing the mask layer; and forming a second insulating film 32 covering the second electrode and the third electrode.SELECTED DRAWING: Figure 6B