| 摘要 |
<p>A separation layer (120) is provided on a substrate (100), and a thin-film device (140), such as a TFT, is fabricated on the substrate. During the fabrication process of the thin-film device (140), detachment promoting ions, for example, hydrogen ions are injected into the separation layer (120). After fabricating the thin-film device (140), the thin-film device (140) is joined to a transferrer (180) preferably through an adhesive layer (160), and then a laser beam is projected from the substrate side. In such a way, in the separation layer (120), detachment is caused to occur by utilizing the action of detachment promoting ions, detaching the thin-film device (140) from the substrate (100). Thus, a desired thin-film device can be transferred onto any type of substrate.</p> |
