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发明名称
SEMICONDUCTOR DEVICE COMPRISING P-TYPE ZnMgSSe LAYER
摘要
<p>A II-VI semiconductor device has a p-type quaternary ZnMgSSe layer (11) formed of undoped ZnMgSSe sub-layers (13) and p-doped sub-layers (15) of ZnSe or of ZnSSe.</p>
申请公布号
WO1999044243(A2)
申请公布日期
1999.09.02
申请号
IB1999000193
申请日期
1999.02.04
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发明人
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