发明名称 Electrostatic discharge protection circuit for integrated circuit
摘要 The circuit includes two high voltage p/n junction diodes (32,34) connected between the positive (12) or negative (14) supply respectively and a first input (10). The diodes comprise field plated diodes to increase their reverse breakdown voltage. A third diode (36) is connected between the positive and negative supplies. The third diode connects in two directions at low voltage. The reverse breakdown voltage of the third diode is higher than the voltage of the supply.
申请公布号 DE19906857(A1) 申请公布日期 1999.09.02
申请号 DE19991006857 申请日期 1999.02.18
申请人 MITEL CORPORATION 发明人 ORCHARD-WEBB, JONATHAN HARRY
分类号 H01L27/02;(IPC1-7):H01L23/62 主分类号 H01L27/02
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