Halbleitervorrichtung und entsprechendes Herstellungsverfahren

摘要

The invention relates to a semiconductor device, comprising a first gate-controlled MOS component (100) with a first gate isolator (150) which is orientated in a first direction and a second gate-controlled MOS component (200) with a second gate isolator (250) which is orientated in a second direction different from the first, the first and second gate isolators (150; 250) having been epitaxially grown at the same time, with the same step. The first and second directions are selected to the effect that the thickness (d2) of the second gate isolator (250) is considerably greater than the thickness (d1) of the first gate isolator (150).