发明名称 |
Halbleiterbauelement zur Betreibung eines Wärmeerzeugers |
摘要 |
A semiconductor device has transistors, each transistor having a first conduction type of a first semiconductor region including a first main electrode region, a second conduction type of second semiconductor region including a channel region which is provided in the first semiconductor region, a second main electrode region provided in the second semiconductor region, a gate electrode on the channel region extending through a gate insulating film between the first and second main electrode regions. A portion of the first main electrode region which contacts the channel region is a high-resistance region. The semiconductor device also has buried-type element isolation regions which prevent the occurrence of latch up and bird's beaks in the device. <IMAGE> |
申请公布号 |
DE69323655(T2) |
申请公布日期 |
1999.09.02 |
申请号 |
DE1993623655T |
申请日期 |
1993.06.17 |
申请人 |
CANON K.K. |
发明人 |
KAIZU, SHUNICHI;NAKAMURA, HIROYUKI;ICHISE, TOSHIHIKO;FUJITA, KEI;KAMEI, SEIJI C/O CANON KABUSHIKI KAISHA |
分类号 |
B41J2/05;B41J2/16;B41J2/37;H01L21/027;H01L21/3213;H01L21/762;H01L21/8249;H01L27/06;H01L29/08;H01L29/78;H01L49/02;H03K17/693 |
主分类号 |
B41J2/05 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|