| 摘要 |
<p>The invention concerns a large-area high-current module of a field-controlled interruptible power semiconductor switch which comprises two large-area contact plates arranged opposite each other and n field-controlled interruptible low-volt power chips (6) whose drain terminals are electrically switched in parallel by one contact plate (2) and whose source terminals (8) are electrically switched in parallel by the other contact plate (4), these contact plates (2, 4) being insulated from each other at their contact faces. According to the invention, one contact plate (2) comprises a plurality of cavities into which insulation devices (10) plug a plurality of busbars (18) which are connected in an electrically conductive manner to the source terminals (8) of the n low-volt power chips (6). The contact plate (4), which connects the source terminals (8) of the n low-volt power chips (6) to one another in an electrically conductive manner, is provided with webs (20) corresponding to these busbars. As a result thereof, it is possible to produce in a simple manner a large-area high-current module of a field-controlled interruptible power semiconductor switch which can be combined in a housing with a GTO thyristor plate to form a GTO cascade circuit.</p> |
