| 摘要 |
<p>A memory cell and a method of writing to a memory cell where a switch couples the output of a latch cell to a predetermined potential in response to a data signal and a control signal is disclosed. In one embodiment the switch includes two transistors, wherein the first transistor is responsive to the data signal and the second transistor is responsive to the control signal, the two transistors coupled such that when both transistors are on the output of the latch is connected to the predetermined potential. In another embodiment the switch includes a transistor and an inverter wherein the transistor is responsive to the control signal and the inverter is connected to the data signal between the data signal input and the output of the latch cell. In an alternative embodiment a random access memory cell includes a data line, an address line, and a global clear line. An access transistor has an access transistor input node, an access transistor output node, and an access transistor control gate. The access transistor input node is connected to the data line and the access transistor control gate is connected to the address line. The cell also includes a forward inverter with a forward inverter input node and a forward inverter output node. The forward inverter input node is connected to the access transistor output node. The cell also includes a feedback inverter. The feedback inverter includes a feedback inverter input node, a feedback inverter output node, and a feedback inverter control node. The feedback inverter input node is connected to the forward inverter output node, the feedback inverter output node is connected to the access transistor output nodes and the feedback inverter control node is connected to the global clear line. The feedback inverter includes a ground access transistor for selectively connecting and isolating the feedback inverter to ground, thereby controlling the output of the random access memory cell. <IMAGE></p> |
