发明名称 Field-emission electron source and method of manufacturing the same
摘要 <p>A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.</p>
申请公布号 EP0939418(A2) 申请公布日期 1999.09.01
申请号 EP19990108499 申请日期 1997.04.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KOGA, KEISUKE;HORI, YOSHIKAZU;YOSHIDA, TAKEHITO;YAMADA, YUKA
分类号 H01J9/02;(IPC1-7):H01J1/30 主分类号 H01J9/02
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