TRENCH TYPE MOS TRANSISTOR FABRICATING METHOD,申请号KR19970000916-传众专利搜索

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发明名称	TRENCH TYPE MOS TRANSISTOR FABRICATING METHOD
摘要
申请公布号	KR100218260(B1)	申请公布日期	1999.09.01
申请号	KR19970000916	申请日期	1997.01.14
申请人	FAIRCHILD KOREA SEMICONDUCTOR LTD.	发明人	LEE, TEA-SUN;SONG, SUNG-KYU
分类号	H01L21/8234;H01L21/336;H01L29/78;(IPC1-7):H01L21/823	主分类号	H01L21/8234
代理机构		代理人
主权项
地址

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