| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an Al gate electrode which is highly resistant to electoromigration and can be micromachined and has a Schottky barrier as a constituent by a lift-off method. SOLUTION: In a method for manufacturing a semiconductor device, when a gate electrode 19G is selectively formed on a substrate 11 by a lift-off method, the gate electrode 19G is formed on the condition that an evaporation rate be 12Å/sec or higher and that the substrate temperature be controlled below the maximum storage temperature of the substrate and at least Al is used as a Schottky metal. Then the substrate temperature is controlled below the maximum operating temperature of the substrate through intermittent evaporation.
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| 申请公布号 |
JPH11238695(A) |
申请公布日期 |
1999.08.31 |
| 申请号 |
JP19980038987 |
申请日期 |
1998.02.20 |
| 申请人 |
TOSHIBA CORP |
发明人 |
KURODA MASAHIRO;ASANO TAKASHI;MURAYAMA MASAYA |
| 分类号 |
H01L21/28;H01L21/203;H01L21/3205;H01L21/338;H01L29/812;(IPC1-7):H01L21/28;H01L21/320 |
主分类号 |
H01L21/28 |
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