发明名称 Method for the heat treatment of ZnSe crystal
摘要 An object of the present invention is to provide a method for the heat treatment of a ZnSe crystal whereby the crystal can be prevented from crystallinity deterioration and caused to have low resistivity without occurrence of precipitates in the crystal. The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200 DEG C./min.
申请公布号 US5944891(A) 申请公布日期 1999.08.31
申请号 US19970907650 申请日期 1997.08.11
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HIROTA, RYU;FUJIWARA, SHINSUKE
分类号 C30B29/48;C30B25/00;C30B31/18;C30B33/00;C30B33/02;(IPC1-7):C30B1/00 主分类号 C30B29/48
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