发明名称 |
Method for the heat treatment of ZnSe crystal |
摘要 |
An object of the present invention is to provide a method for the heat treatment of a ZnSe crystal whereby the crystal can be prevented from crystallinity deterioration and caused to have low resistivity without occurrence of precipitates in the crystal. The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200 DEG C./min.
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申请公布号 |
US5944891(A) |
申请公布日期 |
1999.08.31 |
申请号 |
US19970907650 |
申请日期 |
1997.08.11 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HIROTA, RYU;FUJIWARA, SHINSUKE |
分类号 |
C30B29/48;C30B25/00;C30B31/18;C30B33/00;C30B33/02;(IPC1-7):C30B1/00 |
主分类号 |
C30B29/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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