发明名称 Flash memory device and method that operates a memory cell array in sector units
摘要 A semiconductor device and method is providing having a memory cell array divided into a plurality of sectors and an erasing operation is preferably performed by sectors. The sectors are sub-divided into two or more sub-sectors, and at least one word line inside each of the sub-sectors is commonly coupled to another word line inside a different sub-sector. Thus, a plurality of word lines can be commonly coupled to a single word line decoder. Accordingly, a number of required word line decoders for the semiconductor device is reduced. Further, size and power requirements of the semiconductor device can be reduced.
申请公布号 US5946232(A) 申请公布日期 1999.08.31
申请号 US19980159658 申请日期 1998.09.24
申请人 LG SEMICON CO., LTD. 发明人 YOON, YEON-JOONG
分类号 G11C16/02;G11C16/06;G11C16/08;H01L21/8247;H01L27/115;(IPC1-7):G11C16/04 主分类号 G11C16/02
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