发明名称 Birefringent interlayer for attenuating standing wave photoexposure of a photoresist layer formed over a reflective layer
摘要 A method for attenuating within a microelectronics fabrication a standing wave photoexposure of a photoresist layer formed upon a reflective layer, and a microelectronics fabrication employed within the method. To practice the method, there is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a reflective layer. There is then formed upon the reflective layer a birefringent material layer. The birefringent material layer attenuates a standing wave photoexposure of a photoresist layer subsequently formed upon the birefringent material layer, where the photoresist layer is subsequently photoexposed with an actinic photoexposure radiation beam.
申请公布号 US5945255(A) 申请公布日期 1999.08.31
申请号 US19970868845 申请日期 1997.06.09
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 KING, MINGCHU
分类号 G03F7/09;G03F7/20;(IPC1-7):G03F7/20 主分类号 G03F7/09
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