发明名称 |
Birefringent interlayer for attenuating standing wave photoexposure of a photoresist layer formed over a reflective layer |
摘要 |
A method for attenuating within a microelectronics fabrication a standing wave photoexposure of a photoresist layer formed upon a reflective layer, and a microelectronics fabrication employed within the method. To practice the method, there is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a reflective layer. There is then formed upon the reflective layer a birefringent material layer. The birefringent material layer attenuates a standing wave photoexposure of a photoresist layer subsequently formed upon the birefringent material layer, where the photoresist layer is subsequently photoexposed with an actinic photoexposure radiation beam.
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申请公布号 |
US5945255(A) |
申请公布日期 |
1999.08.31 |
申请号 |
US19970868845 |
申请日期 |
1997.06.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KING, MINGCHU |
分类号 |
G03F7/09;G03F7/20;(IPC1-7):G03F7/20 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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