发明名称 BISMUTH-SUBSTITUTED GARNET THICK FILM MATERIAL AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To provide a Tb-Bi based garnet thick film material which is used as a Faraday rotation element having excellent magneto-optical properties at a 1.55 μm band, without following a conventional technique, and also to provide the production of this film material that involves using SGGG (Gd- Ca)3 (Ga-Mg-Zr)5 O12 ) as the substrate, replacing a part of Tb atoms by Ho or Yb atoms and increasing the Bi content. SOLUTION: This film material consists of a single crystal thick film which is grown by a liquid phase epitaxial growth method with NGG (Nd3 Ga5 O12 ) as the substrate and contains as major components, Tb, Bi, Fe and Al and also, contains 0 to 4.0 wt.% B2 O3 . This production involves subjecting the single crystal thick film to heat treatment while maintaining the film at 950 to 1,130 deg.C in an atmosphere having a >=5% oxygen concn.
申请公布号 JPH11236297(A) 申请公布日期 1999.08.31
申请号 JP19980055831 申请日期 1998.02.20
申请人 TOKIN CORP 发明人 SATO TADAKUNI;ENDO KAZUMITSU
分类号 G02F1/09;C30B29/28;H01F1/34;H01F10/24 主分类号 G02F1/09
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