发明名称 Silicon nitride sintered material
摘要 A silicon nitride sintered material includes silicon nitride and rare earth element compounds. Y and Yb are contained as the rare earth elements in a total amount of 5-7 mole % in terms of oxides, Yb/Y is 4/6 to 9/1 in terms of molar ratio of oxides, and the crystal phases of grain boundary contain a H phase and a J phase with the proportion of the H phase being larger than that of the J phase. A process for producing a silicon nitride sintered material includes the steps of mixing a Si3N4 powder with Y2O3 and Yb2O3 both as a sintering aid, the total amount of Y2O3 and Yb2O3 being 5-7 mole % and the molar ratio of Yb2O3/Y2O3 being 4/6 to 9/1, molding the resulting mixture, sintering the molded material in a nitrogen atmosphere at 1,850-1,950 DEG C., and heat-treating the sintered material in air at 1,000-1,500 DEG C. for 0.5-10 hours. The silicon nitride sintered material has, in a small or large thickness, oxidation resistance and strength at low temperatures while retaining high strength at high temperatures.
申请公布号 US5945363(A) 申请公布日期 1999.08.31
申请号 US19970912516 申请日期 1997.08.18
申请人 NGK INSULATORS, LTD. 发明人 AIHARA, YASUFUMI;INOUE, KATSUHIRO
分类号 C04B35/584;C04B35/593;C04B41/00;C04B41/50;C04B41/80;C04B41/87;(IPC1-7):C04B35/587 主分类号 C04B35/584
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