| 摘要 |
The present invention provides for high speed signal buses in printed circuit boards. For high speed operation, each signal line of a bus has substantially the same electrical length as the other signal lines and forms a loop in two halves, each half electrically shielded from the other half. Each signal line has a first and a second terminal, with each terminal connected to a reference bias voltage through a first resistance which matches a loaded characteristic impedance of the signal line. The reference bias voltage is set at a midpoint of signal voltage swings on the signal line. Such high speed buses have particular applications to high speed memory systems with DRAMs.
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