Composite substrate carrier for high power electronic devices

摘要

A substrate carrier for a ceramic substrate which supports one or more high power semiconductor devices which is fabricated from a metal base composite and which includes strategically located high conductivity copper based inserts to provide an effective heat transfer path to a heat sink for high power electronic devices. The coefficient of thermal expansion of both the metal based composite and the copper based inserts substantially match that of the substrate. The substrate carrier is formed by a pressure casting process where a porous preform of SiC, for example, is infiltrated with molten aluminum.