发明名称 Two-phase boosted CMOS switch drive technique and circuit
摘要 A circuit that produces a gate drive voltage for a MOS transistor switch includes an input that receives a supply voltage, a regulated voltage generating circuit that produces a regulated voltage, and a voltage storage element. A first switch connects the voltage storage element to sample one of the supply voltage and the regulated voltage during a first of first and second non-overlapping time intervals. The second switch connects the voltage storage element to increase the sampled voltage by another of the supply voltage and the regulated voltage to the gate drive voltage during the second non-overlapping time interval. A third switch connects the voltage storage element to provide the gate drive voltage to the MOS transistor switch during the second non-overlapping time interval. The regulated voltage generating circuit produces the regulated voltage such that a high level of the gate drive voltage exceeds the supply voltage yet is maintained less than a breakdown voltage of the MOS transistor switch.
申请公布号 US5945872(A) 申请公布日期 1999.08.31
申请号 US19970965267 申请日期 1997.11.06
申请人 ANALOG DEVICES, INC. 发明人 ROBERTSON, DAVID H.;SINGER, LAWRENCE
分类号 G05F3/24;G11C27/02;(IPC1-7):G05F1/10;G05F3/02 主分类号 G05F3/24
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