| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which enables increase in oncurrent and reduction in source/drain resistance, and a method for its manufacture. SOLUTION: The gate electrode 61 of a thin film transistor and the gate electrode 45 of a bulk transistor are placed on both sides of a semiconductor layer 51 to be the channel region of the thin film transistor. The source/drain regions 57, 57a of the thin film transistor are in direct contact with the semiconductor layer, and are formed into a sidewall shape on both the sides of the gate electrodes with the an insulating layer in-between.
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