| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a wiring structure of a stacked wiring of a semiconductor device, which has a bonding pad of good wire bonding characteristic and a high reliability, and to provide a method for forming a bonding pad opening. SOLUTION: A stacked wiring 30 is constituted of a TiN film 13, an Al alloy film 14, an Al2 O3 thin film 31 and a TiN film 15. A plasma SiN film 17, a CVD SiO2 film 16, the TiN film 15 and the Al2 O3 thin film 31 on the stacked wiring 30 are etched by plasma etching, and an bonding pad opening 32 is formed on a bonding pad part 1.</p> |
