| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a lower electrode of a capacitor, in which over-etching of a hemispherical particulate silicon layer and a formation of a micro-bridge are prevented in a conventional assembling method. SOLUTION: A first conductive layer 40 is formed in an opening which is connected electrically to a specified region of a substrate. A first hemispherical particulate silicon layer 42 and a second dielectric layer are formed on the first conductive layer 40, and a second dielectric layer, the first hemispherical particulate silicon layer 42, and the first conductive layer 40 are patterned. Furthermore, a second conductive layer 46 and a second hemispherical particulate silicon layer 48 are formed over the entire body of a substrate structure, and the part on an oxide layer and the second dielectric layer of the second hemispherical particulate silicon layer 48 and the second conductive layer 46 is removed, and a second dielectric layer 44 is removed and the first hemispherical particulate silicon layer 42 is exposed. |
