Polysilicon thin film transistors with laser-induced solid phase crystallized polysilicon channel

摘要

Polysilicon thin film transistors (TFTs) are formed on glass substrates by selectively etching a dielectric layer to expose portions of an amorphous silicon layer in areas of the substrate occupied by the thin film transistor forming a metal seed layer over the exposed portions of the amorphous silicon layer; and selectively annealing the exposed areas with a laser beam to transform the amorphous silicon layer to a polysilicon layer.