| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high definition and compact active matrix panel excellent in reliability at a low cost by implanting a first impurity into first to third silicon thin films, covering the third silicon thin film with a mask and implanting a second impurity into the first and second silicon thin films in higher density than that of the first impurity. SOLUTION: An acceptor impurity 120 such as boron is implanted all over by an ion implanting method and then activated to become an acceptor by heat-treatment to produce a P-type semiconductor. Thus, the source-drain region 121, 122 of the P-type TFT is formed. Also an acceptor is added to the region 123 to 126 which is to be used as the source-drain region of a N-type TFT. Then the P-type TFT is covered, for example, with a masking material such as a photoresist 128, and a donor impurity 127 such as phosphorus and arsenic is implanted in a higher density than the acceptor impurity 120 to form the source-drain region 123 to 126 of the N-type TFT.</p> |
