发明名称 Method of making a semiconductor device having a flat surface
摘要 A manufacturing method for semiconductor devices such as dynamic RAM, etc. which removes the layer part more on the high position than an arbitrary position on a step forming a gradation by just a prescribed thickness when flattening a layer with a gradation formed of a high position part and a low position part. Then the projecting part created after the etching existing more on the low position side than at the arbitrary position of the gradation is eliminated by heat treatment.
申请公布号 US5946591(A) 申请公布日期 1999.08.31
申请号 US19950553219 申请日期 1995.11.07
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 ASHIGAKI, SHIGEO;HAMAMOTO, KAZUHIRO
分类号 H01L21/3105;H01L21/768;H01L21/8242;H01L27/105;H01L27/108;(IPC1-7):H01L21/476 主分类号 H01L21/3105
代理机构 代理人
主权项
地址