发明名称 |
Method of making a semiconductor device having a flat surface |
摘要 |
A manufacturing method for semiconductor devices such as dynamic RAM, etc. which removes the layer part more on the high position than an arbitrary position on a step forming a gradation by just a prescribed thickness when flattening a layer with a gradation formed of a high position part and a low position part. Then the projecting part created after the etching existing more on the low position side than at the arbitrary position of the gradation is eliminated by heat treatment.
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申请公布号 |
US5946591(A) |
申请公布日期 |
1999.08.31 |
申请号 |
US19950553219 |
申请日期 |
1995.11.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ASHIGAKI, SHIGEO;HAMAMOTO, KAZUHIRO |
分类号 |
H01L21/3105;H01L21/768;H01L21/8242;H01L27/105;H01L27/108;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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