COMPOUND SEMICONDUCTOR SUBSTRATE AND ELIMINATING METHOD OF DEFECTIVE COMPOUND SEMICONDUCTOR ELEMENT,申请号JP19980040324-传众专利搜索

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发明名称	COMPOUND SEMICONDUCTOR SUBSTRATE AND ELIMINATING METHOD OF DEFECTIVE COMPOUND SEMICONDUCTOR ELEMENT
摘要
申请公布号	JPH11238772(A)	申请公布日期	1999.08.31
申请号	JP19980040324	申请日期	1998.02.23
申请人	DAIDO STEEL CO LTD	发明人	YASUURA KENJI
分类号	G01B11/30;G01N21/88;G01N21/93;G01N21/956;H01L21/66;(IPC1-7):H01L21/66	主分类号	G01B11/30
代理机构		代理人
主权项
地址

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