发明名称 |
Hydrogen-occluding alloy pretreatment method, pretreated hydrogen-occluding alloy, and nickel-hydrogen secondary battery employing the same as an anode |
摘要 |
A method of pretreating a hydrogen-occluding alloy, by electrically plating the hydrogen-occluding alloy with a Co-V alloy or a Co-Mo alloy. A nickel-hydrogen secondary battery manufactured using the pretreated hydrogen-occluding alloy has an increased initial activation rate and an increased high rate discharge characteristic.
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申请公布号 |
US5944977(A) |
申请公布日期 |
1999.08.31 |
申请号 |
US19970924034 |
申请日期 |
1997.09.05 |
申请人 |
SAMSUNG DISPLAY DEVICES CO., LTD. |
发明人 |
KIM, KI-HO |
分类号 |
C22C1/00;C22C16/00;C25D3/56;H01M4/24;H01M4/38;H01M10/30;(IPC1-7):C25D3/00 |
主分类号 |
C22C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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