| 摘要 |
A method of forming a silicon oxynitride (SiOxNy) passivation layer on a first side of a silicon wafer that has a plurality of parallel spaced conductive runners positioned thereon. The method comprises the steps of mixing TEOS, Oxygen, Nitrogen and either Ammonia or Diethyl amine and then introducing the mixture into a plasma deposition chamber containing the wafers that are to receive the passivation layer. The mixture is then energized into a plasma which results in a silicon oxynitride passivation layer being deposited onto the upper surface of the silicon wafer. Due to the characteristics of the TEOS gas, the passivation layer is very conformal which reduces the formation of keyholes in the passivation layer. |
